IRF6631PBF mosfet equivalent, power mosfet.
istics
1000 VDS = 10V ≤60µs PULSE WIDTH 100 T J = 150°C 10 T J = 25°C T J = -40°C
Fig 5. Typical Output Characteristics
2.0 ID = 13A
Typical RDS(on) (Normalized)
ID, Dr.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET packa.
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